| PART |
Description |
Maker |
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MMBTH10-4LT1 MMBTH10L MMBTH10LT1G MMBTH10LT1 |
Small Signal VHF Mixer
VHF/UHF Transistor (NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2N4440 SD1060 RF41 |
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C Si, RF SMALL SIGNAL TRANSISTOR, TO-60
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| MMBTH69LT1 |
UHF/VHF Transistor
|
MOTOROLA[Motorola, Inc]
|
| KTC9011S |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| BFQ31 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| MMBT918LT1 |
VHF/UHF Transistor
|
Motorola, Inc
|
| KTC9016 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
